Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−xZrxO2
نویسندگان
چکیده
منابع مشابه
Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer
There is a rising interest in employing the negative capacitance (NC) effect to achieve sub-60 mV/ decade (below the thermal limit) switching in field-effect transistors (FETs). The NC effect, which is an effectual amplification of the applied gate potential, is realized by incorporating a ferroelectric material in series with a dielectric in the gate stack of a FET. One of the leading challeng...
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Key Laboratory for Low Dimensional Materials and Application Technology of Ministry of Education (Xiangtan University), Xiangtan, Hunan 411105, China ASIC R&D Center, School of Electronic Science and Engineering of National University of Defense Technology, Changsha, Hunan 410073, China Pacific Geoscience Centre, Geological Survey of Canada, 9860 West Saanich Road, Sidney, British Columbia, Can...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2019
ISSN: 1931-7573,1556-276X
DOI: 10.1186/s11671-019-2927-9